Finn forfatter "Løvlie, Lars Sundnes"

Viser treff 1-5 av 5

  • Electrical characterization of majority carrier traps in electron irradiated epitaxial N-type Si 
    Løvlie, Lars Sundnes (Master thesis / Masteroppgave, 2007)
    Epitaxial p+/n–/n+ silicon diodes have been irradiated with 6 MeV electrons to a dose of 1014 cm−2, and isochronal and isothermal annealings at the temperatures 325 – 360 C has been performed. The reaction kinetics of VO, ...
  • Intrinsic bulk and interface defects in 4H silicon carbide 
    Løvlie, Lars Sundnes (Doctoral thesis / Doktoravhandling, 2012)
  • Long range lateral migration of intrinsic point defects in n-type 4H-SiC 
    Løvlie, Lars Sundnes; Vines, Lasse; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    The lateral distributions of intrinsic point defects in n-type (0001) 4H-SiC have been investigated following room temperature irradiation with a focused beam of 10 keV protons. Laterally resolved deep level transient ...
  • Negative-U System of Carbon Vacancy in 4H-SiC 
    Son, NT; Trinh, X T; Løvlie, Lars Sundnes; Svensson, Bengt Gunnar; Kawahara, K; Suda, J; Kimoto, T; Umeda, T; Isoya, J; Makino, T; Ohshima, T; Janzen, E (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (VC) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two ...
  • Oxidation-enhanced annealing of implantation-induced Z(1/2) centers in 4H-SiC: Reaction kinetics and modeling 
    Løvlie, Lars Sundnes; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    High-purity epitaxial layers of n-type 4H-SiC have been implanted with 4.3-MeV Si ions to a dose of 3 × 108 cm−2 and then subjected to dry isothermal oxidation at temperatures between 1050 and 1175 °C. Analysis of the ...